. Electronic Components Datasheets 2n7368 free download

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices Qualified Level JAN 2N7368 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Dissipation @ TC = 250C (1) PT 115 W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS TO-254* Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 1.5 C/W 0 0 1) Derate linearly 0.657 W/ C for TC > 25 C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.2 Adc VCEO(sus) 80 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc ICES 1.0 mAdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc ICEX 1.0 mAdc Emitter-Base Cutoff Current VEB = 7.0 Vdc IEBO 1.0 mAdc 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2 2N7368 JAN SERI